the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. not all products and/or types are available in every country. please check with an nec electronics sales representative for availability and additional information. silicon transistor 2sc3736 high speed switching npn silicon epitaxial transistor power mini mold data sheet document no. d17148ej3v0ds00 (3rd edition) (previous no. tc-1891a) date published may 2004 ns cp(k) printed in japan 1987 the mark shows major revised points. description the 2sc3736 is designed for power amplifier and high speed switching applications. features ? high speed, high voltage switching ? low collector saturation voltage ? complementary to the 2sa1460 pnp transistor. absolute maximum ratings (t a = 25c) collector to base voltage v cbo 80 v collector to emitter voltage v ceo 45 v emitter to base voltage v ebo 5.0 v collector current (dc) i c(dc) 1.0 a collector current (pulse) note1 i c(pulse) 2.0 a total power dissipation note2 p t 2.0 w junction temperature t j 150 c storage temperature t stg ? 55 to +150 c notes 1. pw 10 ms, duty cycle 50% 2. mounted on ceramic substrate of 16 cm 2 x 0.7 mm package drawing (unit: mm) 1.6 0.2 1.5 0.1 0.8 min. 2.5 0.1 4.0 0.25 3.0 typ. 1.5 typ. 4.5 0.1 0 .41 +0.0 3 ?0.0 5 0 .47 0.06 0 .42 0.06 0 .42 0.06 13 2 1: emitter 2: collecter (fin) 3: base
data sheet d17148ej3v0ds 2 2sc3736 electrical characteristics (t a = 25c) characteristics symbol test conditions min. typ. max. unit collector cut-off current i ces v ce = 45 v, r be = 0 ? 0.5 a emitter cut-off current i ebo v eb = 4.0 v, i c = 0 a 0.5 a dc current gain note h fe1 v ce = 10 v, i c = 50 ma 60 200 h fe2 v ce = 10 v, i c = 500 ma 60 collector saturation voltage note v ce(sat) i c = 500 ma, i b = 50 ma 0.17 0.4 v base saturation voltage note v be(sat) 0.90 1.2 v gain bandwidth product f t v ce = 10 v, i e = ? 100 ma 300 380 mhz output capacitance c ob v cb = 10 v, i e = 0, f = 1.0 mhz 6.7 10 pf turn-on time t on i c = 500 ma, i b1 = ? i b2 50 ma 20 40 ns storage time t stg 55 80 ns turn-off time t off 72 100 ns note pulsed: pw 350 s, duty cycle 2% h fe classification marking ol ok h fe1 60 to 120 100 to 200
data sheet d17148ej3v0ds 3 2sc3736 typical characteristics (t a = 25c) total power dissipation vs. ambient temperature safe operating area (transient thermal resistance method) p t - total power dissipation - w 2.4 2.0 1.6 1.2 0.8 0.4 0 0 50 100 150 mounted on ceramic substrate of 16 cm 2 x 0.7 mm i c - collector current - a t a - ambient temperature - c 5 2 1 0.5 0.2 0.1 0.05 0.02 0.01 1 2 5 10 20 50 100 i c(pulse) max. i c(dc) max. pw = 1 ms 10 ms 100 ms v ce - collector to emitter voltage - v collector current vs. collector to emitter voltage collector current vs. collector to emitter voltage i c - collector current - a 1.0 0.8 0.6 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 i b = 1.0 ma 10 ma 9.0 ma 8.0 ma 7.0 ma 6.0 ma 5.0 ma 4.0 ma 3.0 ma 2.0 ma i c - collector current - a 1.0 0.8 0.6 0.4 0.2 0 012345 i b = 1.0 ma 10 ma 9.0 ma 8.0 ma 6.0 ma 7.0 ma 5.0 ma 4.0 ma 3.0 ma 2.0 ma v ce - collector to emitter voltage - v v ce - collector to emitter voltage - v dc current gain vs. collector current collector current vs. base to emitter voltage 1000 500 200 100 50 5 20 10 10 m 20 m 50 m 100 m 200 m 500 m 12 5 v ce = 10 v 5 v 2 v h fe - dc current gain i c - collector current - a i c - collector current - a 5 2 1 500 m 200 m 100 m 50 m 20 m 10 m 600 700 800 900 1000 v ce = 10 v v be - base to emitter voltage - v
data sheet d17148ej3v0ds 4 2sc3736 base and collector saturation voltage vs. collector current gain bandwidth product vs. emitter current v be(sat) - base saturation voltage - v v ce(sat) - collector saturation voltage - v 10 5 2 1 0.5 0.05 0.2 0.1 10 m 20 m 50 m 100 m 200 m 500 m 1 2 5 i c = 10 . i b v be(sat) v ce(sat) f t - gain bandwidth product - mhz 1000 500 200 100 50 5 20 10 ? 10 m ? 20 m ? 50 m ? 100 m ? 200 m ? 500 m ? 1 ? 2 ? 5 v ce = 10 v i c - collector current - a i e - emitter current - a output capacitance vs. reverse voltage switching time vs. collector current 5 2 1 50 20 100 10 12 510 20 50 100 f = 1.0 mhz t on - turn-on time - ns t stg - storage time - ns t f - fall time - ns 10 20 5 100 200 50 1000 500 10 m 20 m 50 m 100 m 200 m 500 m 1 2 5 v cc = 10 v i b1 = ? i b2 pw = 200 ns duty cycle 2% t stg t on t f c ob - output capacitance - pf v cb - collector to base voltage - v i c - collector current - a switching time test circuit +10 v 0 100 ns duty cycle = 2% v in v in v out v out v in v out v bb = ? 5 v v cc = 10 v 100 ? 50 ? 20 ? 130 ? 10% 10% 90% 90% 10% t on t off t stg
2sc3736 the information in this document is current as of may, 2004. the information is subject to change without notice. for actual design-in, refer to the latest publications of nec electronics data sheets or data books, etc., for the most up-to-date specifications of nec electronics products. not all products and/or types are available in every country. please check with an nec electronics sales representative for availability and additional information. no part of this document may be copied or reproduced in any form or by any means without the prior written consent of nec electronics. nec electronics assumes no responsibility for any errors that may appear in this document. nec electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of nec electronics products listed in this document or any other liability arising from the use of such products. no license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of nec electronics or others. descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. the incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. nec electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. while nec electronics endeavors to enhance the quality, reliability and safety of nec electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. to minimize risks of damage to property or injury (including death) to persons arising from defects in nec electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. nec electronics products are classified into the following three quality grades: "standard", "special" and "specific". the "specific" quality grade applies only to nec electronics products developed based on a customer- designated "quality assurance program" for a specific application. the recommended applications of an nec electronics product depend on its quality grade, as indicated below. customers must check the quality grade of each nec electronics product before using it in a particular application. "standard": computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "special": transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "specific": aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. the quality grade of nec electronics products is "standard" unless otherwise expressly specified in nec electronics data sheets or data books, etc. if customers wish to use nec electronics products in applications not intended by nec electronics, they must contact an nec electronics sales representative in advance to determine nec electronics' willingness to support a given application. (note) (1) "nec electronics" as used in this statement means nec electronics corporation and also includes its majority-owned subsidiaries. (2) "nec electronics products" means any product developed or manufactured by or for nec electronics (as defined above). ? ? ? ? ? ? m8e 02. 11-1
|
